设计英国威廉希尔公司的解决方案

libraries

0.18 micron libraries

we have helped to revolutionize the foundry industry by offering comprehensive free-of-charge libraries from multiple vendors. in addition, hjtc also offers other libraries available on a fee basis.

free libraries

other libraries

> artisan 0.18um library
> virtual silicon 0.18um library
> faraday 0.18um gii library
> faraday 0.18um ll library
> verisilicon 0.18um library
> virage logic 0.18um memory compiler

free libraries

artisan 0.18um library
standard cell

  • 478 high-density standard cells
  • 9-track cell architecture
  • average cell density of 111k gates/sq.mm
  • multiple drive strengths
  • routable in 3, 4, 5 or more metal layers
  • comprehensive design tool support
  • process specific electrical and physical tuning

single-port synchronous sram generators

  • optimized for high density and high speed
  • flex-repair™ redundancy implementation option
    - includes separate fuse-box generator
    - supports flexible bist implementation
  • broadly configurable to up to 512k bits:
    - 256 to 16k words deep (word increment = 2 x column mux)
    - 2 to 128 bits wide (bit increment = 1)
  • user-configurable mask write option (1 to 36 bit segments)
  • aspect ratio control for efficient floor planning (column mux options: 4, 8, 16)
  • memory operation and data retention at low voltage and down to 0 mhz
  • low active power and leakage-only standby current
  • accurate timing and power models
  • complete set of models supporting industry-leading design tools
  • robust design practices and validation procedures ensure successful designs
  • extensive silicon validation

dual-port synchronous sram generator

  • optimized for high density and high speed
  • two fully-independent read/write ports
  • broadly configurable to up to 256k bits:
    - 128 to 8k words deep (word increment = 2 x column mux)
    - 2 to 128 bits wide (bit increment = 1)
  • user-configurable mask write option (1 to 36 bit segments)
  • aspect ratio control for efficient floor planning (column mux options: 4, 8, 16)
  • memory operation and data retention at low voltage and down to 0 mhz
  • low active power and leakage-only standby current
  • accurate timing and power models
  • complete set of models supporting industry-leading design tools
  • robust design practices and validation procedures ensure successful designs
  • extensive silicon validation

inline i/o

  • 600 3.3v/5vt
  • pad pitch: 60 um
  • input: pull-up/pull-down,schmitt trigger,lvttl,cmos
  • output: multiple current up tp 24ma with 3 slew rate options
  • aspecial pads: clock, crystal oscillator, corner, power and ground

architecture

word

bit

mux

size

access time (ns)

single port sync. sram

16 - 8k
(increment: 2x mux)

2 - 128
(increment: 1)

4, 8, 16

32 bit - 512 kbit

4k x 16
typical: 1.21
worst: 2.13

dual port sync. sram

16 - 8k
(increment: 2x mux)

2 - 128
(increment: 1)

4, 8, 16

32 bit - 512 kbit

4k x 16
typical: 1.28
worst: 2.26


virtual silicon 0.18um library
standard cell

  • 500 high performance standard cells
  • 11-track cell architecture, performance optimized for 200~700 mhz
  • average cell density of 90k gates/sq.mm
  • multiple drive strengths
  • layout using metal 1 only
  • scan version of every flip-flop available
  • fully contacted well ties
  • accurate modeling and characterization for timing and power
  • open architecture developers kit available

inline and staggered i/o

  • 375 3.3v & 3.3v/5vt i/o pads
  • pad pitch: 60um (in-line), 40um (staggered)
  • multiple current drives up to 24ma
  • input: pull-up/pull-down resistor, pad keeper, normal/ schmitt
  • output and bi-directional with slew rate control
  • silicon proven esd and latch-up structures
  • fully contacted well ties
  • analog power pads, crystal pads
  • open architecture developers kit available

pll compilers

  • programmable input, output frequencies and duty cycle
  • input frequency range: 20 mhz - 200 mhz
  • output frequency range: 50mhz -900mhz
  • pll module entirely located in the i/o pad rings
  • dedicated analog power supply pins
  • build-in esd and latch-up protection structures

single port synchronons sram and two port register file compilers

  • synchronous reads/writes
  • static design with zero standby current
  • byte write capability
  • routable over the core with higher metal layer
  • ability to compile to multiple aspect ratio
  • ascan and bist support

architecture

word

bit

mux

size

access time (ns)

single port sync. sram

32 - 4k
(increment: 2x mux)

2 - 128
(increment: 1)

2, 4,
8, 16

32 bit - 256 kbit

4k x 16
typical: 1.80
worst: 3.36

two port register file

8 - 1k
(increment: 2x mux)

4 - 128
(increment: 1)

1, 2, 4

32 bit - 64 kbit

128k x 64
typical: 1.37
worst: 2.38


faraday 0.18um gii library
standard cell

  • 400 high performance standard cells
  • 9-track cell architecture
  • average cell density >120k gates/sq.mm
  • optimized multiple drive strengths
  • high porosity and routability
  • scan version of every flip-flop available
  • ultra low power cell available
  • gated input for preventing leakage
  • fully tool models support

inline and staggered i/o

  • 1.8v, 3.3v i/o pads
  • 1.8v/2.5vt, 3.3v/5vt i/o pads
  • support over 500 io functions
  • pad pitch: 65um (in-line), 40um (stagger)
  • programmable current drives and slew rate control from 2ma to 16ma
  • programmable pull-up/pull-down resistor, normal/ schmitt trigger
  • provide 90 programming features in one i/o
  • in-line to staggered i/o corner available

single port sram, dual port sram, one port register file, two port register file, and via2 rom compilers

  • synchronous reads/writes
  • static design with zero standby current
  • byte write capability
  • provides both high speed and low power srams
  • ability to compile to multiple aspect ratio
  • scan and bist support
  • power port connections support
  • zero hold time for inputs

architecture

word

bit

mux

size

access time (ns)

single port
sync. sram

64 - 64k
(increment: 16 x mux)

1 - 128 (increment: 1)

1, 2, 4,
8, 16

64 bit - 512 kbit

4k x 16
typical: 1.80
worst: 3.1

single port sync.
register file

32 - 2k
(increment: 2 x mux)

1 - 144 (increment: 1)

2, 4, 8

32 bit - 72 kbit

1k x 16
typical: 1.63
worst: 2.72

dual port sync. sram

64 - 32k
(increment: 16 x mux)

1 - 128 (increment: 1)

1, 2,
4, 8

64 bit - 512 kbit

4k x 16
typical: 1.80
worst: 3.1

two port sync. register file

4 - 2k
(increment: 2 x mux)

2 - 144 (increment: 1)

2, 4, 8

8 bit - 72 kbit

1k x 64
typical: 1.7
worst: 2.8

via2 rom

128 - 128k
(increment:128 x mux)

1 - 128 (increment: 1)

1, 2,
4, 8,

128 bit - 2 mbit

4k x 16
typical: 2
worst: 3.4


faraday 0.18um ll library
standard cell

  • 400 high performance standard cells
  • 9-track cell architecture
  • average cell density >120k gates/sq.mm
  • optimized multiple drive strengths
  • high porosity and routability
  • scan version of every flip-flop available
  • ultra low power cell available
  • gated input for preventing leakage
  • fully tool models support

inline and staggered i/o

  • 1.8v, 3.3v i/o pads
  • 1.8v/2.5vt, 3.3v/5vt i/o pads
  • support over 500 io functions
  • pad pitch: 65um (in-line), 40um (stagger)
  • programmable current drives and slew rate control from 2ma to 16ma
  • programmable pull-up/pull-down resistor, normal/ schmitt trigger
  • provide 90 programming features in one i/o
  • in-line to staggered i/o corner available

single port sram, dual port sram, two port register file and via1 rom compilers

  • synchronous reads/writes
  • static design with zero standby current
  • byte write capability
  • provides both high speed and low power srams
  • ability to compile to multiple aspect ratio
  • scan and bist support
  • zero hold time for inputs

architecture

word

bit

mux

size

access time (ns)

single port
sync. sram

64 - 64k
(increment: 16 x mux)

1 - 128 (increment: 1)

1, 2, 4, 8, 16

64 bit - 512 kbit

4k x 16
typical: 2.70
worst: 4.6

dual port sync. sram

64 - 32k
(increment: 16 x mux)

1 - 128 (increment: 1)

1, 2,
4, 8,

64 bit - 512 kbit

4k x 16
typical: 2.80
worst: 4.8

two port sync. register file

1 - 2k
(increment: 1 x mux)

1 - 144 (increment: 1)

1, 2,
4, 8

1 bit - 36 kbit

1k x 16
typical: 4.7
worst: 8

via1 rom

256 - 128k
(increment:256 x mux)

1 - 128 (increment: 1)

1, 2,
4, 8,

256 bit - 2 mbit

4k x 16
typical: 3.8
worst: 6.6


verisilicon 0.18um library (hjtc 0.18um logic 1p6m salicide 1.8v/3.3v process)
high-density standard cell

  • wide variety of cell functions and drive strengths.
  • process-specific optimization for high-density, high-speed, and low-power.
  • engineered for synthesizability and routability.
  • scan flip-flops for design for testability support.

i/o cell

  • 3.3v i/o, 1.8v core, 5v tolerant.
  • both inline and stagger compatible io pads.
  • configurable input-output and skew rate control.
  • robust esd (>2000v) and latch-up immunity (±200 ma). competitive pad pitch and height.

single-port / dual-port sram compilers

  • ultra-high density, high-speed, and low-power.
  • fully static operation and automatic power down.
  • adaptive self-time delay for fast access time.
  • full suite of design views and models.

diffusion rom compiler

  • ultra-high density, high-speed, and low-power.
  • fully static operation and automatic power down.
  • automatic code implementation.
  • high capacity configuration.
  • full suite of design views and models.

two-port register file compiler

  • ultra-high density, high-speed, and low-power.
  • fully static operation and automatic power down.
  • adaptive self-time delay for fast access time.
  • full suite of design views and models.

supported design tools

eda vendor

tools

cadence

ambit, nc-verilog, soc encounter, silicon ensemble-pks, dracula …

synopsys

design compiler, prime time, physical compiler, dft compiler, tetramax atpg, formality, astro, apollo, hercules …

mentor graphics

calibre, fastscan, dftadvisor, modelsim…

magma

blast fusion, blast rtl …



other libraries

virage logic 0.18um memory compiler

hjtc
process
type

word
width
(bits/word)

word
depth
(words)

max
size
(k bits)

max
configuration

aspect
ratio
(yes/no)

bit/byte
write
capability

access time(ns)

sp hd sram

gii

2 - 128

16 - 16k

32 - 512k

16kx32

yes: 4, 8, 16

yes

no

dp hd sram

gii

2 - 128

16 - 8k

32 - 256k

8kx32

yes: 4, 8, 16

yes

no

2p register file

gii/ll

2 - 256

8 - 1024

16 - 16k

1kx16

yes: 1, 2, 4

yes

no

rom

gii/ll

8 - 64

256 - 64k

2k - 1m

64kx16

yes: 16, 32, 64

no

no

sp hs sram

gii/ll

2 - 256

16 - 16k

32 - 512k

16kx32

4, 8, 16

yes

no

dp hs sram

gii/ll

2 - 256

32 - 8k

64 - 256k

8kx32

4, 8, 16

yes

no

sp star
hd-4m
(sram with redundancy)

gii

8 - 256

128 - 64k

16k - 4m

64kx64

yes: 8, 16, 32

yes

yes

sp star
hs-512k (sram with redundancy)

gii

2 - 256

16 - 16k

32 - 512k

16kx32

4, 8, 16

yes

yes

dp star
hs-512k
(sram with redundancy)

gii

2 - 256

32 - 8k

64 - 256k

8kx32

4, 8, 16

yes

yes

t-cam 32k

gii

16 - 64

16 - 512k

1k - 32k

512kx64

1

no

no


artisan 0.18um library
standard cell

  • 1000 high performance standard cells
  • 9-track cell architecture
  • average cell density of 73k gates/sq.mm
  • multiple drive strengths
  • silicon proven
  • scan version of every flip-flop available
  • compatible with mixed signal environment
  • accurate timing and power models

in-line and staggered i/o

  • 3.3v/5vt
  • pad pitch: 76.8um (in-line), 38.4um (staggered)
  • multiple current drives up to 16ma
  • pull ups, pull downs, switchable
  • hysteresis
  • built-in level shifting





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